IRF630B/irfs630b 200v n-channel mosfet general description these n-channel enhancement mode power field effect transistors are produced using kersemi proprietary, planar, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switching dc/dc converters, switch mode power supplies, dc-ac converters for uninterrupted power supply and motor control. features 9.0a, 200v, r ds(on) = 0.4 ? @v gs = 10 v low gate charge ( typical 22 nc) low crss ( typical 22 pf) fast switching 100% avalanche tested improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted * drain current limited by maximum junction temperature. thermal characteristics symbol parameter IRF630B irfs630b units v dss drain-source voltage 200 v i d drain current - continuous (t c = 25c) 9.0 9.0 * a - continuous (t c = 100c) 5.7 5.7 * a i dm drain current - pulsed (note 1) 36 36 * a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 160 mj i ar avalanche current (note 1) 9.0 a e ar repetitive avalanche energy (note 1) 7.2 mj dv/dt peak diode recovery dv/dt (note 3) 5.5 v/ns p d power dissipation (t c = 25c) 72 38 w - derate above 25c 0.57 0.3 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter IRF630B irfs630b units r jc thermal resistance, junction-to-case max. 1.74 3.33 c / w r cs thermal resistance, case-to-sink typ. 0.5 -- c / w r ja thermal resistance, junction-to-ambient max. 62.5 62.5 c / w to-220 irf series s d g to-220f irfs series 2014-8-9 1 www.kersemi.com
IRF630B/irfs630b (note 4) (note 4, 5) (note 4, 5) (note 4) electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 3mh, i as = 9.0a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 9.0a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 200 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.2 -- v/c i dss zero gate voltage drain current v ds = 200 v, v gs = 0 v -- -- 10 a v ds = 160 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4.5 a -- 0.34 0.4 ? g fs forward transconductance v ds = 40 v, i d = 4.5 a -- 7.05 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 550 720 pf c oss output capacitance -- 85 110 pf c rss reverse transfer capacitance -- 22 29 pf switching characteristics t d(on) turn-on delay time v dd = 100 v, i d = 9.0 a, r g = 25 ? -- 11 30 ns t r turn-on rise time -- 70 150 ns t d(off) turn-off delay time -- 60 130 ns t f turn-off fall time -- 65 140 ns q g total gate charge v ds = 160 v, i d = 9.0 a, v gs = 10 v -- 22 29 nc q gs gate-source charge -- 3.6 -- nc q gd gate-drain charge -- 10.2 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 9.0 a i sm maximum pulsed drain-source diode forward current -- -- 36 a v sd drain-source diode forward voltage v gs = 0 v, i s = 9.0 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 9.0 a, di f / dt = 100 a/ s -- 140 -- ns q rr reverse recovery charge -- 0.87 -- c 2014-8-9 2 www.kersemi.com
0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 4 8 12 16 20 24 0 2 4 6 8 10 12 v ds = 100v v ds = 40v v ds = 160v note : i d = 9.0 a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 500 1000 1500 c oss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c iss capacitance [pf] v ds , drain-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] IRF630B/irfs630b 2014-8-9 3 www.kersemi.com
10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 s 1 ms dc 100 ms 10 ms operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 4.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown vol tage t j , junction temperature [ o c] typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9-1. maximum safe operating area for IRF630B figure 10. maximum drain current vs case temperature figure 9-2. maximum safe operating area for irfs630b IRF630B/irfs630b 2014-8-9 4 www.kersemi.com
typical characteristics (continued) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 1.74 /w m ax. 2. d uty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) sin gle pu lse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), therm al r esponse t 1 , square w ave pulse duration [sec] figure 11-1. transient thermal response curve for IRF630B t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 3.33 /w m ax. 2. d uty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) sin g le p u lse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), t herm al r esponse t 1 , square w ave pulse duration [sec] figure 11-2. transient thermal response curve for irfs630b t 1 p dm t 2 IRF630B/irfs630b 2014-8-9 5 www.kersemi.com
charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms IRF630B/irfs630b 2014-8-9 6 www.kersemi.com
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- 2014-8-9 7 www.kersemi.com
package dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 IRF630B/irfs630b 2014-8-9 8 www.kersemi.com
package dimensions (continued) (7.00) (0.70) max1.47 (30 3.18 0.05 to-220f IRF630B/irfs630b 2014-8-9 9 www.kersemi.com
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